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 SM5010 series
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits. High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to make a stable fundamental-harmonic oscillator.
FEATURES
I I I I I I
Inverter amplifier feedback resistor built-in Capacitors CG, CD built-in Standby function Power-save pull-up resistor built-in (5010CLx) 16 mA (VDD = 4.5 V) drive capability (5010ANx, AKx, BNx, BKx, CLx, DNx) 4 mA (VDD = 4.5 V) drive capability (5010AHx, BHx)
SERIES CONFIGURATION
3V operating Version 1
Output Output R e c o m m e n d e d Output R e c o m m e n d e d Output frequency load load operating operating current frequency frequency (max) (max) [mA] rang e [MHz] rang e [MHz] [pF] [pF] fO fO /2 fO /4 fO fO fO /8 15 15 15 30 30 30 50 30 16
SM5010AN1S SM5010AN2S SM5010AN3S SM5010AN4S SM5010AK1S SM5010AH1S SM5010AH2S SM5010AH3S SM5010AH4S SM5010BN1S SM5010BN2S SM5010BN3S SM5010BN4S SM5010BK1S
ina ry
I I I I I
Output three-state function 2.7 to 5.5 V supply voltage Oscillator frequency output (fO, fO/2, fO/4, fO/8 determined by internal connection) 8-pin SOP (SM5010xxxS) Chip form (CF5010xxx)
5V operating
Built-in capacitance CG [pF] CD [pF]
RD [ ]
Input level (5V)
Output duty level
S t a n d by function
-
TTL
CMOS
No No No No No No No No No No No No No No No No No No
50
30
16
-
TTL
CMOS/TTL
lim
50 30 15 - 30 - 50 30 15 30 15 16 15 30 15 16 15 30 15 16 15 30 15 16 15 30 15 30 50 30 15 30 50 30 15 30 50 30 15 - 30 - 50 30 15 15 15 15 30 30 30 30 30 30 30 30 30 30 15 16 15 16 15 16 15 16 15 15 30 50 50 15 30 15 30 50 50 15 30 15 30 50
16 16 16 4 4 4 4 16 16 16 16 16 4 4 4 4 16 16 16 16 16
- - - - - - - 820 820 820 820 820 820 820 820 820 - - - - 820
TTL TTL TTL TTL TTL TTL TTL TTL TTL
CMOS/TTL CMOS/TTL TTL CMOS CMOS CMOS CMOS CMOS CMOS/TTL CMOS/TTL CMOS/TTL TTL CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
fO /2 fO /8 fO
fO /4
fO /2 fO /4 fO fO /8 fO
TBD
TTL TTL TTL TTL TTL TTL TTL CMOS CMOS CMOS CMOS TTL
pre
SM5010BH1S SM5010BH2S fO /2 SM5010BH3S fO /4 fO /8 fO SM5010BH4S SM5010CL1S SM5010CL2S fO /2 fO /4 fO fO /8 SM5010CL3S SM5010CL4S SM5010DN1S 1. Chip form devices have designation CF5010 xxx.
Yes Yes Yes Yes No
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC's standard crystal.
NIPPON PRECISION CIRCUITS--1
SM5010 series
ORDERING INFORMATION
D e vice S M 5 0 1 0 xxxS C F 5 0 1 0 xxx-1 P ackag e 8-pin SOP Chip form
(Unit:mm) * 8-pin SOP
0.695typ 5.2 0.3
lim
1.5 1.27 0.05 0.05 0.1 0.10 0.4 0.1 0.12 M
pre
NIPPON PRECISION CIRCUITS--2
ina ry
0.15 + 0.1
- 0.05
PACKAGE DIMENSIONS
4.4 0.2
6.2 0.3
0.4 0.2
0 to 10
SM5010 series
PAD LAYOUT
(Unit:m)
PINOUT
(Top view)
VDD
Q
(920,1180)
Y
(0,0)
INH XT XT VSS X
Chip size: 0.92 x 1.18 mm Chip thickness: 300 30 m Chip base: V D D level
PIN DESCRIPTION and PAD DIMENSIONS
Number 1 2 3 4 5 6 7 8 Name INH XT XT VSS Q NC NC VDD I/O I
lim
I Amplifier input. O - Amplifier output. Ground O - - No connection No connection - Supply voltage
Output state control input. High impedance when LOW . In the case of the 5 0 1 0 C L x, the oscillator stops and Pow er-saving pull-up resistor built in. Cr ystal oscillator connection pins. Cr ystal oscillator connected between XT and X T
Output. Output frequency (f O , fO /2, fO /4, fO /8) determined by internal connection
BLOCK DIAGRAM
pre
XT
CG Rf
VDD VSS
XT
INH
ina ry
INH XT 1 2 8 7 6 5 VDD NC NC Q XT 3 VSS 4
Description X 195 385 575 765 757.6 - - 165.4
HA5010
P ad dimensions [m] Y
174.4
174.4 174.4 174.4 1017.6 - - 1014.6
CD RD 1/2 1/2 1/2
Q
NIPPON PRECISION CIRCUITS--3
SM5010 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0 V
P arameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Symbol VDD V IN VOUT T opr T stg IO U T PD T sld tsld Condition Rating -0.5 to 7.0 -0.5 to V D D + 0.5 -40 to 85 -0.5 to V D D + 0.5 -65 to 150 10 Unit V V V
Chip form
8-pin SOP 5010 xH x
Output current Pow er dissipation Soldering temperature Soldering time
5010 xN x, xK x, CL x 8-pin SOP 8-pin SOP
8-pin SOP
Recommended Operating Conditions
3V operation VSS = 0 V
P arameter Symbol Series xN x xH x CLx xN x xH x CLx
lim
VDD 2 f 30 MHz, C L 15 p F 2 f 16 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 16 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 16 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F V IN xN x xH x CLx TO P R Symbol Series xN x xK x CLx xH x xN x xK x CLx xN x xK x xH x CLx xH x Condition VDD 2 f 30 MHz, C L 50 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 50 p F 2 f 30 MHz, C L 50 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 50 p F 2 f 30 MHz, C L 50 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 15 p F 2 f 30 MHz, C L 50 p F V IN TO P R
Supply voltage
Input voltage
Operating temperature
5V operation VSS = 0 V
pre
P arameter Supply voltage Input voltage Operating temperature
ina ry
-55 to 125 25 500 255 10 Condition Rating typ - - - - - - - - - min 2.7 2.7 2.7 VSS VSS VSS - 10 - 10 - 20 max 3.6 3.6 3.6 VDD VDD VDD + 70 + 70 + 80 Rating min 4.5 4.5 4.5 4.5 VSS VSS VSS VSS - 40 - 40 - 40 - 40 typ - - - - - - - - - - - - max 5.5 5.5 5.5 5.5 VDD VDD VDD VDD + 85 + 85 + 85 + 85
C C
mA
mW C s
Unit
V
V
C
Unit
V
V
C
NIPPON PRECISION CIRCUITS--4
SM5010 series
Electrical Characteristics
5010xNx series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = -10 to 70 C unless otherwise noted.
P arameter HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage Symbol VOH VOL IZ V IH V IL Condition Q: Measurement cct 1, V D D = 2.7 V, IO H = 8 m A Q: Measurement cct 2, V D D = 2.7 V, IO L = 8 m A Rating min 2.1 - typ 2.4 max - Unit V V A V V
Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O L = V S S INH INH
Current consumption
ID D
Measurement cct 3, load cct 1, I N H = open, C L = 15 p F, f = 30 M H z
ina ry
0.3 - - 0.4 10 10 - - - 2.0 - - - 0.5 5010xN 1 5010xN 2 5010xN 3 5010xN 4
TBD
100 200
mA
I N H pull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance
RUP1 Rf RD CG CD
Measurement cct 4 Measurement cct 5 Design value
- -
- -
k k pF pF
5 0 1 0 B xx
-
820
-
Design value, determined by the internal w afer pattern
5 0 1 0 A xx, 5010Bxx
TBD
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
P arameter Symbol VOH VOL IZ Condition Rating min 3.9 - - - 2.0 - 5010xN 1 5010xN 2 5010xN 3 5010xN 4 5010xK x - - 5 0 1 0 B xx 5 0 1 0 A xx, 5010Bxx - 100 200 820 - - - k k pF pF typ 4.2 0.3 - - - - max - 0.4 10 10 - 0.8 Unit V V A V V
HIGH-level output voltage L O W -level output voltage Output leakage current
HIGH-level input voltage L O W -level input voltage
pre
Current consumption ID D I N H pull-up resistance Feedback resistance RUP1 Rf Oscillator amplifier output resistance Built-in capacitance RD Design value CG CD
lim
V IH V IL INH Measurement cct 3, load cct 2, I N H = open, C L = 50 p F, f = 30 M H z Measurement cct 3, load cct 1, I N H = open, C L = 15 p F, f = 30 M H z Measurement cct 4 Measurement cct 5 Design value, determined by the internal w afer pattern
5010xNx, xKx series
Q: Measurement cct 1, V D D = 4.5 V, IO H = 16 m A Q: Measurement cct 2, V D D = 4.5 V, IO L = 16 m A Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O H = V D D
Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O L = V S S INH
TBD
mA
TBD
NIPPON PRECISION CIRCUITS--5
SM5010 series 5010xHx series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = -10 to 70 C unless otherwise noted.
Rating P arameter HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage Symbol VOH VOL IZ V IH V IL Condition min Q: Measurement cct 1, V D D = 2.7 V, IO H = 2 m A Q: Measurement cct 2, V D D = 2.7 V, IO L = 2 m A 2.1 - typ 2.4 0.3 - - max - 0.5 10 10 - V V A V V Unit
Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O L = V S S INH INH
Current consumption
ID D
Measurement cct 3, load cct 2, I N H = open, C L = 15 p F, f = 16 M H z
ina ry
- - 2.0 - - - 0.5 5010xH 1 5010xH 2 5010xH 3 5010xH 4
TBD
100 200
mA
I N H pull-up resistance Feedback resistance Oscillator amplifier output resistance Built-in capacitance
RUP1 Rf RD CG CD
Measurement cct 4 Measurement cct 5 Design value
- -
- -
k k pF pF
5 0 1 0 B xx
-
820
-
Design value, determined by the internal w afer pattern
5 0 1 0 A xx, 5010Bxx
TBD
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
Rating Unit min 3.9 - - - 2.0 - 5010xH 1 5010xH 2 5010xH 3 5010xH 4 - - 5 0 1 0 B xx 5 0 1 0 A xx, 5010Bxx - 100 200 820 - - - k k pF pF typ 4.2 0.3 - - - - max - 0.5 10 A 10 - 0.8 V V V V P arameter Symbol VOH VOL IZ Condition
HIGH-level output voltage L O W -level output voltage Output leakage current
HIGH-level input voltage L O W -level input voltage
pre
V IL INH Current consumption ID D I N H pull-up resistance Feedback resistance RUP1 Rf Oscillator amplifier output resistance Built-in capacitance RD Design value CG CD
lim
V IH INH Measurement cct 3, load cct 2, I N H = open, C L = 15 p F, f = 30 M H z Measurement cct 4 Measurement cct 5 Design value, determined by the internal w afer pattern
Q: Measurement cct 1, V D D = 4.5 V, IO H = 4 m A Q: Measurement cct 2, V D D = 4.5 V, IO L = 4 m A Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O H = V D D
Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O L = V S S
TBD
mA
TBD
NIPPON PRECISION CIRCUITS--6
SM5010 series 5010CLx series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = -20 to 80 C unless otherwise noted.
Rating P arameter HIGH-level output voltage L O W -level output voltage Output leakage current HIGH-level input voltage L O W -level input voltage Symbol VOH VOL IZ V IH V IL Condition min Q: Measurement cct 1, V D D = 2.7 V, IO H = 8 m A Q: Measurement cct 2, V D D = 2.7 V, IO L = 8 m A 2.2 - typ 2.4 0.3 - - max - 0.4 10 10 V V A V V Unit
Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O L = V S S INH INH
Current consumption
ID D
Measurement cct 3, load cct 2, I N H = open, C L = 15 p F, f = 30 M H z
ina ry
- - 0.7V D D 0.3V D D 5010CL1 5010CL2 5010CL3 5010CL4
TBD
100
mA
I N H pull-up resistance Feedback resistance Built-in capacitance
RUP1 RUP2 Rf CG CD
-
-
k M k pF pF
Measurement cct 4 Measurement cct 5
TBD 200
-
-
Design value, determined by the internal wafer pattern
TBD
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
Rating Unit min 4.0 - - - 0.7V D D 0.3V D D 5010CL1 5010CL2 5010CL3 5010CL4 - 100 TBD - 200 - - k M k pF pF typ 4.2 0.3 - - max - 0.4 10 A 10 V V V V P arameter Symbol VOH VOL IZ Condition
HIGH-level output voltage L O W -level output voltage Output leakage current
HIGH-level input voltage L O W -level input voltage
pre
Current consumption ID D I N H pull-up resistance RUP1 RUP2 Rf Feedback resistance Built-in capacitance CG CD
lim
V IH V IL INH INH Measurement cct 3, load cct 2, I N H = open, C L = 50 p F, f = 30 M H z Measurement cct 4 Measurement cct 5
Q: Measurement cct 1, V D D = 4.5 V, IO H = 16 m A Q: Measurement cct 2, V D D = 4.5 V, IO L = 16 m A Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O H = V D D
Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O L = V S S
TBD
mA
Design value, determined by the internal wafer pattern
TBD
NIPPON PRECISION CIRCUITS--7
SM5010 series
Switching Characteristics
5010xNx series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = -10 to 70 C unless otherwise noted.
Rating P arameter Output rise time Output fall time Output duty cycle 1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tP L Z tP Z L Condition min - - typ 3.0 3.0 - max 6.0 6.0 60 Measurement cct 6, load cct 2, C L = 15 p F, 0.1V D D to 0.9V D D Measurement cct 6, load cct 2, C L = 15 p F, 0.9V D D to 0.1V D D Measurement cct 6, load cct 2, V D D = 3.0 V, Ta = 25 C , C L = 15 p F, f = 30MHz Unit ns ns % ns ns
Measurement cct 7, load cct 2, V D D = 3.0 V, Ta = 25 C , C L = 15 p F
1. Determined by the lot monitor.
5010xNx, xKx series
5 V operation (5010xNx): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
Rating typ 2.0 4.0 2.0 4.0 - - - P arameter Symbol tr2 tr3 Output fall time Output duty cycle 1 tf2 tf3 Condition
Output rise time
Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D
ina ry
40 - - 100 - - 100 min - - - - 45 - - max 4.0 8.0 4.0 C L = 15 p F C L = 50 p F C L = 15 p F C L = 50 p F 8.0 55 100 100 Rating Condition min - - 45 - - typ 1.5 1.5 - - - max 3.0 3.0 55 100 100
Unit
ns
lim
Duty tP L Z tP Z L Symbol tr4 tf4 Duty tP L Z tP Z L
ns
Measurement cct 6, load cct 2, V D D = 5.0 V, Ta = 25 C , C L = 50 p F, f = 30MHz Measurement cct 7, load cct 2, V D D = 5.0 V, Ta = 25 C , C L = 15 p F
% ns ns
Output disable delay time Output enable delay time
1. Determined by the lot monitor.
5 V operation (5010AN2, AN3, AN4, BN2, BN3, BN4, xKx): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
pre
P arameter Output rise time Output fall time Output duty cycle 1 Output disable delay time Output enable delay time 1. Determined by the lot monitor.
Unit ns ns % ns ns
Measurement cct 6, load cct 1, C L = 15 p F, 0.4V to 2.4V Measurement cct 6, load cct 1, C L = 15 p F, 2.4V to 0.4V
Measurement cct 6, load cct 1, V D D = 5.0 V, Ta = 25 C , C L = 15 p F, f = 30MHz Measurement cct 7, load cct 1, V D D = 5.0 V, Ta = 25 C , C L = 15 p F
NIPPON PRECISION CIRCUITS--8
SM5010 series 5010xHx series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = -10 to 70 C unless otherwise noted.
Rating P arameter Output rise time Output fall time Output duty cycle 1 Output disable delay time Output enable delay time Symbol tr1 tf1 Duty tP L Z tP Z L Condition min Measurement cct 6, load cct 2, C L = 15 p F, 0.1V D D to 0.9V D D Measurement cct 6, load cct 2, C L = 15 p F, 0.9V D D to 0.1V D D Measurement cct 6, load cct 2, V D D = 3.0 V, Ta = 25 C , C L = 15 p F, f = 16MHz - - typ 15 15 - max 30 30 ns ns % ns ns Unit
Measurement cct 7, load cct 2, V D D = 3.0 V, Ta = 25 C , C L = 15 p F
1. Determined by the lot monitor.
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
P arameter Symbol tr2 tr3 Output fall time Output duty cycle 1 tf2 tf3 Duty tP L Z Condition
Output rise time
Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D
ina ry
40 - 60 - 100 - - 100 Rating typ 5 min - - - - max 10 C L = 15 p F C L = 50 p F C L = 15 p F C L = 50 p F 13 5 26 10 13 - - - 26 45 - - 55 100 100
Unit
ns
ns
lim
tP Z L
Measurement cct 6, load cct 2, V D D = 5.0 V, Ta = 25 C , C L = 15 p F, f = 30MHz Measurement cct 7, load cct 2, V D D = 5.0 V, Ta = 25 C , C L = 15 p F
% ns ns
Output disable delay time Output enable delay time
1. Determined by the lot monitor.
pre
NIPPON PRECISION CIRCUITS--9
SM5010 series 5010CLx series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = -20 to 80 C unless otherwise noted.
Rating P arameter Symbol tr2 tr4 Output fall time Output duty cycle 1 Output disable delay time 2 Output enable delay time 2 tf2 tf4 Duty tP L Z tP Z L Condition min Output rise time Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D C L = 15 p F C L = 30 p F C L = 15 p F C L = 30 p F - - - - typ 2.0 3.0 2.0 3.0 - max 4.0 ns 6.0 4.0 6.0 55 Unit
ina ry
45 - - 100 - - 100 Rating typ 1.5 4.0 1.5 4.0 - - - Condition min - - - - 40 - - max 3.0 8.0 3.0 C L = 15 p F C L = 50 p F C L = 15 p F C L = 50 p F 8.0 60 100 100
f (MHz) 30 R () 17.2 L (mH) 4.36 Ca (fF) 6.46 Cb (pF) 2.26
ns
Measurement cct 6, load cct 2, V D D = 3.0 V, Ta = 25 C , C L = 15 p F, f = 30MHz
% ns ns
Measurement cct 7, load cct 2, V D D = 3.0 V, Ta = 25 C , C L = 15 p F
1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = -40 to 85 C unless otherwise noted.
P arameter Symbol tr2 tr3 tf2 tf3
Unit
Output rise time
Output fall time Output duty cycle 1
lim
Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D Duty tP L Z tP Z L
Cb L Ca R
Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D
ns
ns
Measurement cct 6, load cct 2, V D D = 5.0 V, Ta = 25 C , C L = 50 p F, f = 30MHz Measurement cct 7, load cct 2, V D D = 5.0 V, Ta = 25 C , C L = 15 p F
% ns ns
Output disable delay time 2 Output enable delay time 2
1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed.
pre
Current consumption and Output waveform with NPC's standard crystal
NIPPON PRECISION CIRCUITS--10
SM5010 series
FUNCTIONAL DESCRIPTION
Standby Function
AH, AK, AN, BH, BK, BN, DN series When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Version AH, AK, AN, BH, BK, BN, DN series CL series LOW INH HIGH (or open) LOW HIGH (or open) Q Oscillator
A n y f O , fO /2, fO /4 or f O /8 output frequency High impedance
A n y f O , fO /2, fO /4 or f O /8 output frequency High impedance
Power-save Pull-up Resistance (CL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
pre
NIPPON PRECISION CIRCUITS--11
lim
ina ry
Nor mal operation Nor mal operation Nor mal operation Stopped
CL series
SM5010 series
MEASUREMENT CIRCUITS
Measurement cct 1 Measurement cct 4
3.0V or 5.0V
VDD
VDD
R1
VSS
Q output
2.0V P -P , 10MHz sine wave input signal (3V operation) 3.5V P -P , 10MHz sine wave input signal (5V operation) C1 : 0.001F R1 : 50 R2 : 263 (5010xN x, xK x/ 3V operation) 245 (5010xN x, xK x/ 5V operation) 1050 (5010xH x/ 3V operation) 975 (5010xH x/ 5V operation) 275 (5010CLx/ 3V operation) 250 (5010CLx/ 5V operation)
Measurement cct 2
IZ, IOL VDD IZ
lim
Q
A
INH
VSS
V
VOH VOL
Measurement cct 3
pre
A
VDD
IDD
Signal Generator
C1
XT
Q
R1
VSS
2.0V P -P , 30MHz sine wave input signal (3V operation) 3.5V P -P , 30MHz sine wave input signal (5V operation) C1 : 0.001F R1 : 50
ina ry
R2
Signal Generator
C1 XT Q
RUP1 =
VDD IPR
(VIL = 0V)
VSS
INH
V
RUP2 = VDD VIH (VIH = 0.7VDD) IPR
VOH 0V
VIH VIL
A
IPR
Measurement cct 5
VDD
XT XT
Rf =
VDD IRf
VSS
A
IRf
Measurement cct 6
IDD IST
A
XT X'tal XT INH VDD
Q VSS
Measurement cct 7
VDD
Signal Generator
R1
XT VSS
Q INH
R1 : 50
NIPPON PRECISION CIRCUITS--12
SM5010 series
Load cct 1
Load cct 2
R Q output
(Including probe capacitance)
Q output CL
(Including probe capacitance)
CL
C L = 15pF : DUTY , ID D , tr , tf R = 400
Switching Time Measurement Waveform
Output duty level (CMOS)
Q output
0.9VDD 0.1VDD
tr
Output duty level (TTL)
lim
2.4V 0.4V TW
Q output
tr
Output duty cycle (CMOS)
pre
Q output
TW Output duty cycle (TTL)
Q output
TW T DUTY= TW/ T 100 (%)
ina ry
C L = 15pF : DUTY , ID D , tr1 , tf1 , tr2 , tf2 , tr4 , tf4 C L = 30pF : tr4 , tf4 C L = 50pF : tr3 , tf3
0.9VDD
0.1VDD
DUTY measurement voltage (0.5V DD)
TW
tf
2.4V 0.4V
DUTY measurement voltage (1.4V )
tf
DUTY measurement voltage (0.5VDD) DUTY= TW/ T 100 (%)
T
DUTY measurement voltage (1.4V)
NIPPON PRECISION CIRCUITS--13
SM5010 series
Output Enable/Disable Delay
INH
Q output
Note (CL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay.
NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with expor t controls on the distribution or dissemination of the products. Customers shall not expor t, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, Japan Telephone: +81-3-3642-6661 Facsimile: +81-3-3642-6698 http://www.npc.co.jp/ Email: sales@ npc.co.jp NP0015AE 2000.10
pre
NIPPON PRECISION CIRCUITS INC.
lim
NIPPON PRECISION CIRCUITS--14
ina ry
VIH VIL
tPLZ
tPZL
INH input waveform
tr = tf
10ns


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